KTC2316 transistor (npn) features power dissipation p cm: 0.9 w (tamb=25 ) collector current i cm: 0.8 a collector-base voltage v (br)cbo : 120 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 1 ma, i e =0 120 v collector-emitter breakdown voltage v (br)ceo ic= 10 ma, i b =0 120 v emitter-base breakdown voltage v (br)ebo i e =1ma, i c =0 5 v collector cut-off current i cbo v cb = 120 v, i e =0 0.1 a emitter cut-off current i ebo v eb = 4 v, i c =0 0.1 a h fe(1) v ce = 5 v, i c = 10 ma 60 dc current gain h fe(2) v ce = 5 v, i c = 100 ma 80 240 collector-emitter saturation voltage v ce(sat) i c = 500 ma, i b = 50 ma 1 v transition frequency f t v ce = 5 v, i c = 100 ma 120 mhz collector output capacitance c ob v cb = 10 v, i e =0, f= 1 mhz 30 pf classification of h fe(1) rank o y range 80-160 120-240 marking 1 2 3 to-92l 1. emitter 2. collector 3. base KTC2316 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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